參數(shù)資料
型號(hào): NDP5060
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: 26 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 356K
代理商: NDP5060
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Maximum Continuos Drain-Source Diode Forward Current
26
A
Maximum Pulsed Drain-Source Diode Forward Current
78
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 13 A
(Note 1)
V
GS
= 0 V, I
= 26 A,
dI
F
/dt = 100 A/μs
0.9
1.3
V
t
rr
Reverse Recovery Time
54
120
ns
I
rr
THERMAL CHARACTERISTICS
Reverse Recovery Current
2.1
8
A
R
θ
JC
R
θ
JA
Note:
1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case
2.2
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
NDP5060 Rev.A
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