參數(shù)資料
型號(hào): NDP5060
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: 26 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 356K
代理商: NDP5060
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 30 V, I
D
= 26 A
100
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
26
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 60 V, V
GS
= 0 V
60
V
Zero Gate Voltage Drain Current
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2
2.9
4
V
T
J
= 125°C
1.4
2.2
2.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 13 A
0.04
0.05
T
J
= 125°C
0.07
0.08
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 13 A
26
A
Forward Transconductance
9
S
V
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
630
pF
225
pF
70
pF
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 26 A,
V
GS
= 10 V, R
GEN
= 15
9
20
nS
t
r
t
D(off)
Turn - On Rise Time
95
200
nS
Turn - Off Delay Time
19
40
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
48
100
nS
Total Gate Charge
V
= 24 V,
I
D
= 26 A, V
GS
= 10 V
20
40
nC
Gate-Source Charge
5
nC
Gate-Drain Charge
11
nC
NDP5060 Rev.A
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