參數(shù)資料
型號: NDM3000
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 3 Phase Brushless Motor Driver
中文描述: 3000 mA, 30 V, 6 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SOIC-16
文件頁數(shù): 1/12頁
文件大?。?/td> 246K
代理商: NDM3000
May 1996
NDM3000
3 Phase Brushless Motor Driver
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDM3000
Units
V
DSS
V
GSS
Drain-Source Voltage (All Types)
± 30
V
Gate-Source Voltage (All Types)
± 20
V
I
D
Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -
Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
± 3.0
A
- Pulsed
(Note 1a & 2)
± 10
P
D
Total Power Dissipation
(Note 1a)
Q1+Q4 or Q1+Q6 or Q3+Q2 or
(Note 1b)
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1c)
2.5
W
1.6
1.4
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
NDM3000 Rev. E
The NDM3000 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
±3.0A, ±30V, 2.5W
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
Q1
Q2
Q5
Q3
Q6
Q4
1,16
4,13
8,9
11,14
3,6
2
5
7
10
12
15
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDM3001 3 Phase Brushless Motor Driver(+/-2.9A,+/-30V, 2.5W)(三相無刷電機驅(qū)動器(漏電流:+/-2.9A,漏源電壓:+/-30V,功耗: 2.5W))
NDP4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor(15A, 50V,0.10Ω)(N溝道邏輯電平增強型MOS場效應(yīng)管(漏電流15A, 漏源電壓50V,導(dǎo)通電阻0.10Ω))
NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor(15A, 50V,0.10Ω)(N溝道邏輯電平增強型MOS場效應(yīng)管(漏電流15A, 漏源電壓50V,導(dǎo)通電阻0.10Ω))
NDP4050 N-Channel Enhancement Mode Field Effect Transistor(15A, 50V,0.10Ω)(N溝道增強型MOS場效應(yīng)管(漏電流15A, 漏源電壓50V,導(dǎo)通電阻0.10Ω))
NDB4050 0 OHM 1% 1/20W SMT (0402) CHIP RES
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