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參數(shù)資料
| 型號(hào)： | NDL7540PA |
| 廠商： | NEC Corp. |
| 英文描述： | 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| 中文描述： | 摻鉺光纖放大器1 480納米的應(yīng)用InGaAsP的應(yīng)變量子阱的DC -異質(zhì)結(jié)激光二極管模塊 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | NDL7540PA |
Data Sheet P14127EJ2V0DS00
7
NX7460LE
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER mW MAX
WAVELENGTH nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
NEC Corporation
NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
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| NDL7552P | 制造商:NEC 制造商全稱:NEC 功能描述:InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION |
| NDL7553P | 制造商:NEC 制造商全稱:NEC 功能描述:InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION |
| NDL7553P_00 | 制造商:NEC 制造商全稱:NEC 功能描述:InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION |
| NDL7553P1 | 制造商:NEC 制造商全稱:NEC 功能描述:InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION |
| NDL7553P1C | 制造商:NEC 制造商全稱:NEC 功能描述:InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION |
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