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參數(shù)資料
| 型號： | NDL7540PA |
| 廠商： | NEC Corp. |
| 英文描述： | 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| 中文描述： | 摻鉺光纖放大器1 480納米的應用InGaAsP的應變量子阱的DC -異質(zhì)結激光二極管模塊 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | NDL7540PA |
Data Sheet P14127EJ2V0DS00
3
NX7460LE
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Monitor PD: T
LD
= 25 °C, T
C
= 0 to +65 °C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Monitor Current
I
m
V
R
= 5 V, I
F
= 550 mA
500
1 000
1 500
μ
A
Monitor Dark Current
I
D
V
R
= 5 V
2.0
10
nA
Tracking Error
γ
*1
I
m
= const.
0.5
dB
*1
γ
= 10 log
0
I
m
I
m
T
LD
= T
C
= 25 C
(@P
f
(25 C) = 120 mW)
T
LD
= 25 C
T
C
= 0 to +65 C
P
f
(mW)
X
P
f
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Thermistor and TEC: T
LD
= 25 °C, T
C
= 0 to +65 °C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Thermistor Resistance
R
T
LD
= 25 °C
9.5
10.0
10.5
k
B Constant
B
3 300
3 400
3 500
K
Cooler Current
I
C
T = 40 K
1.0
1.25
A
Cooler Voltage
V
C
T = 40 K
3.5
4.3
V
Cooling Capacity
T
*1
I
C
= 1.25 A, I
F
= 660 mA
40
K
*1
T = T
C
– T
LD
P
f
120 mW
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