參數(shù)資料
型號： NDB608BE
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： 32 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 2/6頁
文件大小： 73K
代理商： NDB608BE
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 25 V, I
D
= 36 A
NDP608AE
NDP608BE
NDB608AE
NDB608BE
200
mJ
36
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 μA
ALL
80
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 80 V,
V
GS
= 0 V
ALL
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
ALL
100
nA
Gate - Body Leakage, Reverse
ALL
-100
nA
V
DS
= V
,
I
D
= 250 μA
ALL
2
2.9
2.3
4
V
V
T
J
= 125°C
1.4
3.2
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 18 A
NDP608A
NDP608AE
NDB608A
NDB608AE
0.031
0.042
T
J
= 125°C
0.05
0.08
V
GS
= 10 V,
I
D
= 16 A
NDP608B
NDP608BE
NDB608B
NDB608BE
NDP608A
NDP608AE
NDB608A
NDB608AE
NDP608B
NDP608BE
NDB608B
NDB608BE
ALL
0.045
T
J
= 125°C
0.09
A
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
36
32
A
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Forward Transconductance
V
DS
= 10 V, I
D
= 18 A
10
17.5
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
1370
1800
pF
ALL
390
500
pF
ALL
140
200
pF
NDP608.SAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDB610A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB610AE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB610B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB610BE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB7050 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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