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參數(shù)資料
| 型號： | NDB408AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.16Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.16Ω）) |
| 中文描述： | 12 A, 80 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 73K |
| 代理商： | NDB408AE |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
t
r
t
D(OFF)
Turn - Off Delay Time
t
f
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
V
DD
= 40 V, I
D
= 12 A,
V
GS
= 10 V, R
GEN
= 24
ALL
ALL
7.5
48
20
80
nS
nS
Turn - On Rise Time
ALL
ALL
22
32
40
60
nS
nS
Turn - Off Fall Time
V
DS
= 64 V,
I
D
= 12 A, V
GS
= 10V
ALL
ALL
ALL
12
2.5
6
17
nC
nC
nC
NDP408A
NDP408AE
NDB408A
NDB408AE
NDP408B
NDP408BE
NDB408B
NDB408BE
NDP408A
NDP408AE
NDB408A
NDB408AE
NDP408B
NDP408BE
NDB408B
NDB408BE
ALL
12
A
11
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
36
A
33
A
V
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 6 A
0.87
0.74
68
1.3
1.2
100
V
V
ns
T
J
= 125°C
t
rr
I
rr
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Reverse Recovery Time
V
GS
= 0 V, I
= 12 A,
dI
S
/dt = 100 A/μs
ALL
Reverse Recovery Current
ALL
4.7
7
A
R
θ
JC
R
θ
JA
Notes:
1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
ALL
3
°
C/W
Thermal Resistance, Junction-to-Ambient
ALL
62.5
°
C/W
NDP408.SAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDP408A | N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.16Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.16Ω）) |
| NDB408B | N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.9Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.9Ω）) |
| NDB408BE | N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.9Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.9Ω）) |
| NDB410AE | N-Channel Enhancement Mode Field Effect Transistor（9A,100V，0.25Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流9A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| NDP410A | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB408B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB408BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB410A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB410AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB410B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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