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參數(shù)資料
| 型號(hào)： | NDB408AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.16Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.16Ω）) |
| 中文描述： | 12 A, 80 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | NDB408AE |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 25 V, I
D
= 12 A
NDP408AE
NDP408BE
NDB408AE
NDB408BE
40
mJ
12
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 μA
ALL
80
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 80 V,
V
GS
= 0 V
ALL
250
μA
T
J
= 125°C
1
mA
nA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
ALL
100
Gate - Body Leakage, Reverse
ALL
-100
nA
V
DS
= V
,
I
D
= 250 μA
ALL
2
2.9
4
V
T
J
= 125°C
1.4
2.3
0.11
3.6
0.16
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 6 A
NDP408A
NDP408AE
NDB408A
NDB408AE
T
J
= 125°C
0.19
0.32
V
GS
= 10 V,
I
D
= 5.5 A
NDP408B
NDP408BE
NDB408B
NDB408BE
NDP408A
NDP408AE
NDB408A
NDB408AE
NDP408B
NDP408BE
NDB408B
NDB408BE
ALL
0.2
T
J
= 125°C
0.5
A
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
11
10
A
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Forward Transconductance
V
DS
= 10 V, I
D
= 6 A
3
5.3
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
380
500
pF
ALL
115
125
pF
ALL
35
50
pF
NDP408.SAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDP408A | N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.16Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.16Ω）) |
| NDB408B | N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.9Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.9Ω）) |
| NDB408BE | N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.9Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.9Ω）) |
| NDB410AE | N-Channel Enhancement Mode Field Effect Transistor（9A,100V，0.25Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流9A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| NDP410A | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB408B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB408BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB410A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB410AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB410B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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