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參數(shù)資料
| 型號： | ND2410L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Depletion-Mode MOSFET Transistors(最大漏源導(dǎo)通電阻10Ω，夾斷電流0.18A的N溝道耗盡型MOSFET晶體管) |
| 中文描述： | N溝道耗盡型MOSFET晶體管（最大漏源導(dǎo)通電阻10Ω，夾斷電流0.18A的N溝道耗盡型MOSFET的晶體管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 71K |
| 代理商： | ND2410L |
ND2406L/2410L, BSS129
4
Siliconix
S-52426—Rev. C, 14-Apr-97
Typical Characteristics (25 C Unless Otherwise Noted) (Cont’d)
Normalized On-Resistance
vs. Junction Temperature
2.25
V
GS
= 0 V
I
D
= 30 mA
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
Forward Transconductance vs. Drain Current
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Capacitance
Load Condition Effects on Switching
N
T
t
1
– Square Wave Pulse Duration (sec)
I
D
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
C
t
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
I
D
– Drain Current (mA)
T
J
– Junction Temperature ( C)
r
D
–
(
g
f
240
200
160
0
0
10
50
120
80
20
30
40
40
C
iss
C
rss
C
oss
1
100
300
100
3
10
10
t
f
t
d(off)
t
r
t
d(on)
V
DD
= 25 V
V
GS
= 0 to –5 V
R
G
= 25
350
150
50
1
10
100
1 K
250
200
100
300
0
–55 C
150 C
25 C
V
DS
= 10 V
Pulse Test 80 s,
1% Duty Cycle
2.00
1.75
0.50
–50
–10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= –5 V
f = 1 MHz
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