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參數(shù)資料
| 型號： | ND2410L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Depletion-Mode MOSFET Transistors(最大漏源導(dǎo)通電阻10Ω，夾斷電流0.18A的N溝道耗盡型MOSFET晶體管) |
| 中文描述： | N溝道耗盡型MOSFET晶體管（最大漏源導(dǎo)通電阻10Ω，夾斷電流0.18A的N溝道耗盡型MOSFET的晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 71K |
| 代理商： | ND2410L |
ND2406L/2410L, BSS129
2
Siliconix
S-52426—Rev. C, 14-Apr-97
Specifications
a
Limits
ND2406L
ND2410L
BSS129
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
D i S
Drain-Source
Breakdown Voltage
V
GS
= –9 V, I
D
= 10 A
260
240
V
(BR)DSV
V
GS
= –5 V, I
D
= 10 A
260
240
V
GS
= –3 V, I
D
= 250 A
260
230
V
Gate Source Cutoff Voltage
Gate-Source Cutoff Voltage
GS( ff)
V
GS(off)
V
DS
= 5 V, I
D
= 10 A
–1.5
–4.5
–0.5
–2.5
V
DS
= 3 V, I
D
= 1 mA
–0.7
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
10
10
100
nA
=
50
50
V
DS
= 180 V, V
GS
= –9 V
1
=
200
Drain Cutoff Current
D( ff)
I
D(off)
V
DS
= 180 V, V
GS
= –5 V
1
A
=
200
V
DS
= 230 V, V
GS
= –3 V
0.1
=
200
Drain-Saturation Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
350
40
40
mA
V
GS
= 2 V, I
D
= 30 mA
3.3
Drain Source On Resistance
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 0 V, I
D
= 30 mA
4.5
6
10
=
7.2
15
25
V
GS
= 0 V, I
D
= 14 mA
4
20
Forward Transconductance
c
g
fs
V
DS
= 25 V, I
D
= 250 mA
375
140
mS
110
Common Source
Output Conductance
c
g
os
V
DS
= 10 V, I
D
= 30 A
70
S
Dynamic
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= –5 V
f = 1 MHz
25 V V
70
120
120
Output Capacitance
C
oss
20
30
30
pF
Reverse Transfer Capacitance
C
rss
10
15
15
Switching
d
Turn On Time
Turn-On Time
t
d(on)
15
t
r
25
30
75
ns
Turn-Off Time
t
d(off)
40
t
f
100
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VDDV24
2%.
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