參數(shù)資料
型號： NCP700MN180R2G
廠商： ON SEMICONDUCTOR
元件分類： 基準電壓源/電流源
英文描述： Ultra Low Noise, High PSSR,BiCMOS RF LDO Regulator
中文描述： 1.8 V FIXED POSITIVE LDO REGULATOR, DSO6
封裝： 2 X 2.20 MM, 0.65 MM PITCH, LEAD FREE, DFN-6
文件頁數(shù)： 3/8頁
文件大小： 135K
代理商： NCP700MN180R2G
NCP700
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(V
in
= V
out
+ 1.0 V, V
CE
= 1.2 V, C
in
= 0.1 F, C
out
= 1 F, C
noise
= 10 nF, T
A
= -40
°
C to 85
°
C
,
unless otherwise specified (Note 2))
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
REGULATOR OUTPUT
Input Voltage
V
in
2.5
-
5.5
V
Output Voltage (Note 3)
1.8 V
2.8 V
3.0 V
V
in
= (V
out
+1.0 V) to 5.5 V
I
out
= 1 mA
V
out
1.764
2.744
2.940
-
-
-
1.836
2.856
3.060
V
Output Voltage (Note 3)
1.8 V
2.8 V
3.0 V
V
in
= (V
out
+1.0 V) to 5.5 V
I
out
= 1 mA to 150 mA
V
out
1.746
2.716
2.910
-
-
-
1.854
2.884
3.090
V
Power Supply Ripple Rejection
V
in
= V
out
+1.0 V + 0.5 V
p- p
I
out
= 1 mA to 150 mA
C
noise
= 100nF
f = 120 Hz
f = 1 kHz
f = 10 kHz
PSRR
-
-
-
80
80
65
-
-
-
dB
Line Regulation
V
in
= (V
out
+1.0 V) to 5.5 V, I
out
= 1 mA
Reg
line
-0.2
-
0.2
%/V
Load Regulation
I
out
= 1 mA to 150 mA
Reg
load
-
12
25
mV
Output Noise Voltage
f = 10 Hz to 100 kHz
I
out
= 1 mA to 150 mA C
noise
= 100 nF
C
noise
= 10 nF
V
n
-
-
15
20
-
-
V
rms
Output Current Limit
V
out
= V
out(nom)
– 0.1 V
I
LIM
150
310
470
mA
Output Short Circuit Current
V
out
= 0 V
I
SC
150
320
490
mA
Dropout Voltage (Note 4)
2.8 V
3.0 V
I
out
= 150 mA
V
DO
-
-
105
100
155
150
mV
GENERAL
Ground Current
I
out
= 1 mA
I
out
= 150 mA
I
GND
-
-
70
110
90
220
A
Disable Current
V
CE
= 0 V
I
DIS
-
0.1
1
A
Thermal Shutdown Threshold (Note 5)
T
SD
-
150
-
°
C
Thermal Shutdown Hysteresis (Note 5)
T
SH
-
20
-
°
C
CHIP ENABLE
Input Threshold
Low
High
V
th(CE)
-
1.2
-
-
0.4
-
V
Internal Pull-Down Resistance (Note 6)
R
PD(CE)
2.5
5
10
M
TIMING
Turn-on Time
I
out
= 150 mA
C
noise
= 10 nF
C
noise
= 100 nF
t
on
-
-
0.4
4
-
-
ms
Turn-off Time
C
noise
= 10 nF/100 nF
I
out
= 1 mA
I
out
= 10 mA
t
off
-
-
800
200
-
-
s
2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at T
J
= T
A
= 25
°
C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. Contact factory for other voltage options.
4. Measured when the output voltage falls 100 mV below the regulated voltage at V
in
= V
out
+ 1.0 V
If V
out
< 2.5 V, then V
DO
= V
in
- V
out
at V
in
= 2.5 V.
5. Guaranteed by design and characterization.
6. Expected to disable device when CE pin is floating.
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