參數(shù)資料
型號(hào): NCP700MN180R2G
廠商: ON SEMICONDUCTOR
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Ultra Low Noise, High PSSR,BiCMOS RF LDO Regulator
中文描述: 1.8 V FIXED POSITIVE LDO REGULATOR, DSO6
封裝: 2 X 2.20 MM, 0.65 MM PITCH, LEAD FREE, DFN-6
文件頁數(shù): 2/8頁
文件大?。?/td> 135K
代理商: NCP700MN180R2G
NCP700
http://onsemi.com
2
Figure 2. Simplified Block Diagram
+
-
Current
Limit
Bandgap
Reference
Voltage
CE
GND
Active
Discharge
V
out
V
in
C
noise
PIN FUNCTION DESCRIPTION
DFN6 2x2.2
Pin No.
Pin Name
Description
1
CE
Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect to
GND. If this function is not in use, connect to V
in
. Internal 5 M Pull Down resistor is connected
between CE and GND.
2, 5, EPAD
GND
Power Supply Ground (Pins are fused for the DFN package)
3
V
in
Power Supply Input Voltage
4
V
out
Regulated Output Voltage
6
C
noise
Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage (Note 1)
V
in
-0.3 V to 6 V
V
Chip Enable Voltage
V
CE
-0.3 V to V
in
+0.3 V
V
Noise Reduction Voltage
V
Cnoise
-0.3 V to V
in
+0.3 V
V
Output Voltage
V
out
-0.3 V to V
in
+0.3 V
V
Maximum Junction Temperature (Note 1)
T
J(max)
150
°
C
Storage Temperature Range
T
STG
-55 to 150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE:
This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL-STD-883, Method 3015
Machine Model Method 200 V
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Package Thermal Resistance, DFN6: (Note 1)
Junction-to-Lead (pin 2)
Junction-to-Ambient
R
θ
JA
37
120
°
C/W
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area
相關(guān)PDF資料
PDF描述
NCP700MN280R2G Ultra Low Noise, High PSSR,BiCMOS RF LDO Regulator
NCP700MN300R2G Ultra Low Noise, High PSSR,BiCMOS RF LDO Regulator
NCP802SN1T1 Highly Integrated Lithium Battery Protection Circuit for One Cell Battery Packs
NCP802SAN5T1 PSU, OPEN FRAME, 100W, 12V; Voltage, output:12V; Current, output:8.5A; Power rating:102W; Voltage, supply min:85V; Voltage, supply max:265V; Length / Height, external:35mm; Width, external:62mm; Depth, external:222mm; Frequency, RoHS Compliant: Yes
NCP802SAN1T1 Highly Integrated Lithium Battery Protection Circuit for One Cell Battery Packs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NCP700MN250R2G 功能描述:低壓差穩(wěn)壓器 - LDO RF LDO / 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
NCP700MN275R2G 功能描述:低壓差穩(wěn)壓器 - LDO RF LDO / 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
NCP700MN280R2G 功能描述:低壓差穩(wěn)壓器 - LDO LO NOISE HI PSSR BiCMOS RF LDO 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
NCP700MN300R2G 功能描述:低壓差穩(wěn)壓器 - LDO LO NOISE HI PSSR BiCMOS RF LDO 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
NCP700MN330R2G 功能描述:低壓差穩(wěn)壓器 - LDO RF LDO / 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓(最大值):307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20