參數(shù)資料
型號: NCP699
廠商: ON SEMICONDUCTOR
英文描述: 150 mA CMOS Low Iq LDO with Enable in TSOP-5(帶有使能端的150mA CMOS, 低Iq LDO)
中文描述: 一五零毫安CMOS低智商與低壓降穩(wěn)壓器中啟用的TSOP - 5(帶有使能端的150mA的的CMOS,低智商LDO)穩(wěn)壓器
文件頁數(shù): 3/9頁
文件大小: 203K
代理商: NCP699
NCP699
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(V
in
= V
out(nom.)
+ 1.0 V, V
enable
= V
in
, C
in
= 1.0 F, C
out
= 1.0 F, T
A
= 25
°
C,
unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (I
out
= 10 mA, T
A
= -40
°
C to 85
°
C)
1.3 V
1.5 V
1.8 V
2.5 V
2.8 V
3.0 V
3.1 V
3.3 V
5.0 V
V
out
1.261
1.455
1.746
2.425
2.716
2.910
3.007
3.201
4.850
1.3
1.5
1.8
2.5
2.8
3.0
3.1
3.3
5.0
1.339
1.545
1.854
2.575
2.884
3.090
3.193
3.399
5.150
V
Line Regulation (I
out
= 10 mA)
1.3 V-4.4 V (V
in
= V
out(nom.)
+ 1.0 V to 6.0 V)
4.5 V-5.0 V (V
in
= 5.5 V to 6.0 V)
Load Regulation (I
out
= 1.0 mA to 150 mA)
Output Current Limit
1.3 V-3.9 V (V
in
= V
out(nom.)
+ 2.0 V)
4.0 V-5.0 V (V
in
= 6.0 V)
Dropout Voltage (I
out
= 150 mA,
Measured at V
out
= V
out(nom)
-3.0%)
1.3 V
1.5 V
1.8 V
2.5 V
2.8 V
3.0 V
3.1 V
3.3 V
5.0 V
Disable Current (T
A
= -40
°
C to 85
°
C)
(Enable Input = 0 V)
Ground Current (T
A
= -40
°
C to 85
°
C)
(Enable Input = V
in
, I
out
= 1.0 mA to I
o(nom.)
)
Output Short Circuit Current (V
out
= 0 V)
1.3 V-3.9 V (V
in
= V
out(nom.)
+ 2.0 V)
4.0 V-5.0 V (V
in
= 6.0 V)
Output Voltage Noise (f = 100 Hz to 100 kHz)
I
out
= 30 mA, C
out
= 1 F
Ripple Rejection
(f = 120 Hz, 15 mA)
(f = 1.0 kHz, 15 mA)
Enable Input Threshold Voltage (T
A
= -40
°
C to 85
°
C)
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
Reg
line
-
-
1.0
1.0
3.0
3.0
mV/V
Reg
load
I
o(nom.)
-
0.3
0.8
mV/mA
150
150
240
240
-
-
mA
V
in
-V
out
-
-
-
-
-
-
-
-
-
800
690
570
400
360
340
330
320
240
900
750
620
450
420
400
400
360
300
mV
DIS
-
0.03
1.0
A
I
GND
-
40
90
A
I
out(max)
150
150
300
300
600
600
mA
V
n
-
100
-
Vrms
RR
-
-
55
50
-
-
dB
V
th(en)
0.95
-
-
-
-
0.3
V
Output Voltage Temperature Coefficient
T
C
-
100
-
ppm/
°
C
3. Maximum package power dissipation limits must be observed.
PD
TJ(max)
TA
RJA
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
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