參數資料
型號: NCP699
廠商: ON SEMICONDUCTOR
英文描述: 150 mA CMOS Low Iq LDO with Enable in TSOP-5(帶有使能端的150mA CMOS, 低Iq LDO)
中文描述: 一五零毫安CMOS低智商與低壓降穩(wěn)壓器中啟用的TSOP - 5(帶有使能端的150mA的的CMOS,低智商LDO)穩(wěn)壓器
文件頁數: 2/9頁
文件大?。?/td> 203K
代理商: NCP699
NCP699
http://onsemi.com
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disabled. If this function is not used, Enable should be connected to Vin.
4
N/C
No internal connection.
5
Vout
Regulated output voltage.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
V
in
2.1 to 6.0
V
Enable Voltage
Enable
-0.3 to V
in
+0.3
V
Output Voltage
V
out
-0.3 to V
in
+0.3
V
Power Dissipation
P
D
Internally Limited
W
Operating Junction Temperature
T
J
-40 to +125
°
C
Operating Ambient Temperature
T
A
-40 to +85
°
C
Storage Temperature
T
stg
-55 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL-STD-883, Method 3015
Machine Model Method 200 V
2. Latch-up capability (85
°
C)
200 mA DC with trigger voltage.
THERMAL CHARACTERISTICS
Rating
Symbol
Test Conditions
Typical Value
Unit
Junction-to-Ambient
R
JA
1 oz Copper Thickness, 100 mm
2
250
°
C/W
PSIJ-Lead 2
JL2
1 oz Copper Thickness, 100 mm
2
68
°
C/W
NOTE:
Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following
boundary conditions as stated in EIA/JESD 51-1, 2, 3, 7, 12.
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