參數(shù)資料
型號(hào)： NCP1611BDR2G
廠商： ON Semiconductor
文件頁數(shù)： 12/29頁
文件大?。?/td> 879K
描述： IC PFC CTLR HE ENHANCED 8-SOIC
標(biāo)準(zhǔn)包裝： 3,000
系列： *
NCP1611
http://onsemi.com
12
TYPICAL CHARACTERISTICS
Figure 21. Error Amplifier Transconductance
Gain vs. Temperature
Figure 22. Ratio (V
OUT
 Low Detect Threshold /
V
REF
) vs. Temperature
T
J
, JUNCTION TEMPERATURE (癈)
T
J
, JUNCTION TEMPERATURE (癈)
150
175
200
225
250
93
94
95
96
97
98
Figure 23. Ratio (V
OUT
 Low Detect Hysteresis /
V
REF
) vs. Temperature
Figure 24. V
CONTROL
 Source Current when
(V
OUT
 Low Detect) is Activated for Dynamic
Response Enhancer (DRE) vs. Temperature
T
J
, JUNCTION TEMPERATURE (癈)
T
J
, JUNCTION TEMPERATURE (癈)
0
0.1
0.2
0.3
0.4
0.5
140
160
180
200
220
240
260
280
Figure 25. Current Sense Voltage Threshold
vs. Temperature
Figure 26. OverCurrent Protection Leading
Edge Blanking vs. Temperature
T
J
, JUNCTION TEMPERATURE (癈)
T
J
, JUNCTION TEMPERATURE (癈)
480
485
490
495
505
510
515
520
120
140
160
180
220
240
260
280
110
90
70
30
10
10
30
50
50
130
110
90
70
30
10
10
30
50
50
130
110
90
70
30
10
10
30
50
50
130
110
90
70
30
10
10
30
50
50
130
110
90
70
30
10
10
30
50
50
130
500
110
90
70
30
10
10
30
50
50
130
200
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