參數(shù)資料
型號(hào): NCN5192MNRG
廠商: ON Semiconductor
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 0K
描述: IC HART MODEM CMOS SGL 32QFN
標(biāo)準(zhǔn)包裝: 1
系列: *
NCN5192
http://onsemi.com
2
BLOCK DIAGRAM
Figure 1. Block Diagram NCN5192
Demodulator
Logic
Rx HP Filter
Rx Comp
Carrier Detect
Counter
Carrier Comp
Sine
Shaper
Numeric
Controlled
Oscillator
DEMODULATOR
MODULATOR
Crystal
Oscillator
POR
BIAS
NCN5192
RxAF
VDD
RxA
RxAFI
RxD
AREF
CDREF
TxA
CD
TxD
RTS
RESET
CBIAS
VDDA
VSS VSSA
FSK_OUT
FSK_IN
XIN
XOUT
RxD_ENH
VPOR
JUMP
CS
SCLK
DATA
DAC
DACREF
CLK2
CLK1
SPI
DAC
KICK
ELECTRICAL SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Min
Max
Units
TA
Ambient Temperature
40
+85
°C
TS
Storage Temperature
55
+150
°C
TJ
Junction Temperature
40
+150
°C
VDD
Supply Voltage
0.3
6.0
V
VIN, VOUT
DC Input, Output
0.3
VDD + 0.3
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. CMOS devices are damaged by highenergy electrostatic discharge. Devices must be stored in conductive foam or with all pins shunted.
Precautions should be taken to avoid application of voltages higher than the maximum rating. Stresses above absolute maximum ratings
may result in damage to the device.
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