參數(shù)資料
型號: NAND512R4A2CN6F
廠商: 意法半導(dǎo)體
英文描述: 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述: 512兆位,528 Byte/264字的頁面,1.8V/3V,NAND閃存芯片
文件頁數(shù): 26/51頁
文件大?。?/td> 517K
代理商: NAND512R4A2CN6F
Program and erase times and endurance cycles
NAND512-A2C
32/51
8
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in Table 14
Table 14.
Program, Erase Times and Program Erase Endurance Cycles
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
200
500
s
Block Erase Time
2
3ms
Program/Erase Cycles per block (with
ECC)
100,000
cycles
Data Retention
10
years
相關(guān)PDF資料
PDF描述
NAND512R4A2CZA6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CZA6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2CZA6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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參數(shù)描述
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