參數(shù)資料
型號(hào)： NAND512R3A0BN6E
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述： 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁(yè)面，1.8V/3V，NAND閃存芯片
文件頁(yè)數(shù)： 33/57頁(yè)
文件大?。?/td> 410K
代理商： NAND512R3A0BN6E
33/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
Ta-
ble 14.
Table 14. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in
Ta-
ble 15., Absolute Maximum Ratings
, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
STMicroelectronics SURE Program and other rel-
evant quality documents.
also
to
the
Table 15. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
shoot to V
DD
+ 2V for less than 20ns during transitions on I/O pins.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
200
500
μs
Block Erase Time
2
3
ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
Value
Unit
Min
Max
T
BIAS
Temperature Under Bias
–
50
125
°C
T
STG
Storage Temperature
–
65
150
°C
V
IO
(1)
Input or Output Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
V
DD
Supply Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
相關(guān)PDF資料
PDF描述
NAND512R3A0CZB6T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZA1F 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZA1T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZB1E 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2CZA6T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R3A2AZA6E 功能描述:IC FLASH 512MBIT 55VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
NAND512R3A2BZA6E 功能描述:閃存 128Mbit-1Gbit 1.8/3V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512R3A2CZA6E 功能描述:IC FLASH 512MBIT 63VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
NAND512R3A2CZA6F 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R
NAND512R3A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
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