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參數(shù)資料
| 型號(hào)： | NAND01GR3A0AZA6 |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63 |
| 封裝： | 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63 |
| 文件頁數(shù)： | 15/56頁 |
| 文件大?。?/td> | 871K |
| 代理商： | NAND01GR3A0AZA6 |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
22/56
Figure 14. Read Block Diagrams
Note: 1. Highest address depends on device density.
Figure 15. Sequential Row Read Operations
Figure 16. Sequential Row Read Block Diagrams
AI07596
A0-A7
A9-A26(1)
Area A
(1st half Page)
Read A Command, X8 Devices
Area B
(2nd half Page)
Area C
(Spare)
Area A
(main area)
Area C
(Spare)
A0-A7
Read A Command, X16 Devices
A0-A7
Read B Command, X8 Devices
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
A0-A3 (x8)
A0-A2 (x16)
Read C Command, X8/x16 Devices
Area A
Area A/ B
Area C
(Spare)
A9-A26(1)
A4-A7 (x8), A3-A7 (x16) are don't care
I/O
RB
Address Inputs
ai07597
1st
Page Output
Busy
tBLBH1
(Read Busy time)
00h/
01h/ 50h
Command
Code
2nd
Page Output
Nth
Page Output
Busy
tBLBH1
AI07598
Block
Area A
(1st half Page)
Read A Command, x8 Devices
Area B
(2nd half Page)
Area C
(Spare)
Area A
(main area)
Area C
(Spare)
Read A Command, x16 Devices
Read B Command, x8 Devices
Read C Command, x8/x16 Devices
Area A
Area A/ B
Area C
(Spare)
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
1st page
2nd page
Nth page
1st page
2nd page
Nth page
1st page
2nd page
Nth page
1st page
2nd page
Nth page
Block
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND01GR3A2AZA6E | 128M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63 |
| NAND01GR3A2AZA6 | 128M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63 |
| NAND01GR4B2BZA1F | 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63 |
| NAND08GR4B3AZB6 | 512M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63 |
| NAND256W4A2AZA6E | 16M X 16 FLASH 3V PROM, 12000 ns, PBGA55 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GR3A0AZA6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A0AZA6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A0AZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A0AZB1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A0AZB1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
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