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參數(shù)資料
| 型號： | N302AP |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | DISPLAY, 7 SEGMENT |
| 中文描述： | N溝道邏輯電平PWM優(yōu)化UltraFET溝功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 122K |
| 代理商： | N302AP |
2002 Fairchild Semiconductor Corporation
January 2002
Rev. B January 2002
I
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.0019
(Typ), V
GS
= 10V
r
DS(ON)
= 0.0027
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 110nC, V
GS
= 5V
Q
gd
(Typ) = 31nC
C
ISS
(Typ) = 11000pF
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
30
±
20
Units
V
V
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Power dissipation
Derate above 25
Operating and Storage Temperature
GS
I
D
75
75
A
A
A
W
C
= 25
= 100
o
C, V
o
C, V
GS
= 10V)
= 4.5V)
C
GS
Figure 4
345
2.3
-55 to 175
P
D
o
C
W/
o
o
C
T
J
, T
STG
C
R
R
θ
JC
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220
0.43
62
o
C/W
o
C/W
θ
JA
Device Marking
N302AP
Device
ISL9N302AP3
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50
D
G
S
TO-220AB
DRAIN
(FLANGE)
GATE
SOURDRAIN
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