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參數(shù)資料
| 型號(hào)： | N302AS |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| 中文描述： | N溝道邏輯電平PWM優(yōu)化UltraFET溝功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 253K |
| 代理商： | N302AS |
2002 Fairchild Semiconductor Corporation
April 2002
Rev. B1,April 2002
I
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.0019
(Typ), V
GS
= 10V
r
DS(ON)
= 0.0027
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 110nC, V
GS
= 5V
Q
gd
(Typ) = 31nC
C
ISS
(Typ) = 11000pF
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
75
75
28
A
A
A
A
W
Figure 4
345
2.3
-55 to 175
P
D
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
0.43
62
43
o
C/W
o
C/W
o
C/W
Device Marking
N302AS
Device
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
ISL9N302AS3ST
D
G
S
TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
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