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參數(shù)資料
| 型號(hào)： | N02L163WN1AB2-55I |
| 元件分類： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封裝： | 6 X 8 MM, GREEN, BGA-48 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 184K |
| 代理商： | N02L163WN1AB2-55I |
(DOC# 14-02-014 REV N ECN# 01-1267)
5
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
N02L163WN1A
AMI Semiconductor, Inc.
Power Savings with Page Mode Operation (WE = VIH)
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Page Address (A4 - A16 )
LB, UB
OE
CE
Word Address (A0 - A3)
Open page
Word 1
Word 2
Word 16
...
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| N02L163WN1AB-55I | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT2-55I | 制造商:ON Semiconductor 功能描述:N02L163WN1A Series 2 Mbit ( 128 K X 16 ) Asynchronous CMOS SRAM - TSOP II-44 |
| N02L163WN1AT2-55ITR | 制造商:ON Semiconductor 功能描述:N02L163WN1A Series 2 Mbit ( 128 K X 16 ) Asynchronous CMOS SRAM - TSOP II-44 |
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