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參數(shù)資料
| 型號(hào)： | N02L163WN1AB2-55I |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封裝： | 6 X 8 MM, GREEN, BGA-48 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | N02L163WN1AB2-55I |
(DOC# 14-02-014 REV N ECN# 01-1267)
11
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
N02L163WN1A
AMI Semiconductor, Inc.
Ordering Information
2006 AMI Semiconductor, Inc. All rights reserved.
AMI Semiconductor, Inc. ("AMIS") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
AMIS does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
AMIS makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does AMIS assume any liability arising out of the application or use of
any product or circuit described herein. AMIS does not authorize use of its products as critical components in any application in which the failure of the AMIS product may be
expected to result in significant injury or death, including life support systems and critical medical instruments.
Revision History
Revision #
Date
Change Description
A
Dec. 1999
Initial Preliminary Release
B
Sept. 2000
Modified Voltage Range and Standby Current Limits.
C
Oct. 2000
Added Missing Tas Parameter Specification.
D
Oct. 2000
Modified Standby Current Specifications.
E
Jan. 2001
Extensive Modification to use voltage regulator design
F
Mar. 2001
Modified BGA pinout, access time 70ns @ 2.7V, misc. errata
G
May 2001
Changed access time to 55ns, modified 44-Lead TSOP Package diagram
H
June 2001
Revised voltage range in Timing table, revised Dimensions table
I
Sept. 2001
Minor parametric modifications, full production release
J
Dec. 2001
Part number change from EM128L16, modified Overview and Features, added
Page Mode Operation diagram, revised Operating Characteristics table, Package
diagram, Functional Description table and Ordering Information diagram
K
Nov. 2002
Replaced Isb and Icc on Product Family table with typical values
L
Oct. 2004
Added Pb-Free and Green Package Option
M
Nov. 2005
Removed Pb-Free Pkg, added Green Pkg and RoHS Compliant
N
September 2006
Converted to AMI Semiconductor
N02L163WN1AX-XX X
I = Industrial, -40°C to 85°C
55 = 55ns
T = 44-pin TSOP II
B = 48-ball BGA
T2 = 44-pin TSOP II Green Package (RoHS Compliant)
B2 = 48-ball BGA Green Package (RoHS Compliant)
Temperature
Performance
Package Type
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| N02L163WN1AB-55I | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AT2-55I | 制造商:ON Semiconductor 功能描述:N02L163WN1A Series 2 Mbit ( 128 K X 16 ) Asynchronous CMOS SRAM - TSOP II-44 |
| N02L163WN1AT2-55ITR | 制造商:ON Semiconductor 功能描述:N02L163WN1A Series 2 Mbit ( 128 K X 16 ) Asynchronous CMOS SRAM - TSOP II-44 |
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