參數(shù)資料
型號(hào)： MX29LV800BT
廠商： Macronix International Co., Ltd.
英文描述： 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 800萬(wàn)位[1Mx8/512K x16] CMOS單電壓3V時(shí)僅閃存
文件頁(yè)數(shù)： 34/63頁(yè)
文件大小： 765K
代理商： MX29LV800BT
34
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
FIGURE 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A12 to A18 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure comple-
tion can be verified by DATA# polling and toggle bit check-
ing after automatic erase starts. Device outputs 0 dur-
ing erasure and 1 after erasure on Q7. (Q6 is for toggle
bit; see toggle bit, DATA# polling, timing waveform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
tWC
Address
OE#
CE#
55h
2AAh
Sector
Address 1
Sector
Address 0
30h
ProIn
VA
VA
30h
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
Sector
Address n
tAS
tAH
tBAL
tGHWL
tCH
tWP
tDS tDH
tWHWH2
Read Status Data
Erase Command Sequence(last two cycle)
tBUSY
tRB
tCS
tWPH
tVCS
WE#
Data
RY/BY#
VCC
30h
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