參數(shù)資料
型號(hào)： MX29LV800BT
廠商： Macronix International Co., Ltd.
英文描述： 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 800萬位[1Mx8/512K x16] CMOS單電壓3V時(shí)僅閃存
文件頁(yè)數(shù)： 32/63頁(yè)
文件大小： 765K
代理商： MX29LV800BT
32
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be veri-
fied by DATA# polling and toggle bit checking after auto-
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7. (Q6 is for toggle bit; see toggle
bit, DATA# polling, timing waveform)
FIGURE 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM
AUTOMATIC CHIP ERASE TIMING WAVEFORM
tWC
Address
OE#
CE#
55h
2AAh
555h
10h
ProIn
VA
VA
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
tAS
tAH
tGHWL
tCH
tWP
tDS
tDH
tWHWH2
Read Status Data
Erase Command Sequence(last two cycle)
tBUSY
tRB
tCS
tWPH
tVCS
WE#
Data
RY/BY#
VCC
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