- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380561 > MX29LV161BTI-70R (MACRONIX INTERNATIONAL CO LTD) 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000 PDF資料下載
參數(shù)資料
| 型號： | MX29LV161BTI-70R |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000 |
| 中文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 13/58頁 |
| 文件大?。?/td> | 995K |
| 代理商： | MX29LV161BTI-70R |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁
13
P/N:PM0855
MX29LV161T/B
REV. 1.0, SEP. 24, 2001
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the de-
vice to be entirely pre-programmed prior to executing
the Automatic Sector Erase Set-up command and Au-
tomatic Sector Erase command. Upon executing the
Automatic Sector Erase command, the device will auto-
matically program and verify the sector(s) memory for
an all-zero data pattern. The system is not required to
provide any control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
When using the Automatic sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "un-
lock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE
or CE, whichever happens later, while the command(data)
is latched on the rising edge of WE or CE, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE or
CE, whichever happens later. Each successive sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 50us from
the rising edge of the preceding WE or CE, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.
ERASE SUSPEND
This command only has meaning while the state ma-
chine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend Com-
mand is issued during the sector erase operation, the
device requires a maximum 20us to suspend the sector
erase operation. However, when the Erase Suspend com-
mand is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation. After this command has
been executed, the command register will initiate erase
suspend mode. The state machine will return to read
mode automatically after suspend is ready. At this time,
state machine only allows the command register to re-
spond to Erase Resume, program data to , or read data
from any sector not selected for erasure.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend pro-
gram operation is complete, the system can once again
read array data within non-suspended sectors.
ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.
WORD/BYTE PROGRAM COMMAND SEQUENCE
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is
not
required to provide further controls or timings. The device
automatically generates the program pulses and verifies
the programmed cell margin. Table 4 shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
Q7, Q6, or RY/BY. See "Write Operation Status" for
information on these status bits.
Any commands written to the device during the Em-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29LV161BTI-90 | 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000 |
| MX29LV161BTI-90R | 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000 |
| MX29LV161BXBI-90R | 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000 |
| MX29LV161T | 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000 |
| MX29LV161 | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV320CBTC-90G | 制造商:Macronix International Co Ltd 功能描述:NOR Flash, 2M x 16, 40 Pin, Plastic, TSSOP |
| MX29LV320CBTI-90G | 制造商:MACRONIX 功能描述: |
| MX29LV320DBXEI-70G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 32 Mb (4 M x 8) 70 ns Parallel Flash-LFBGA-48 |
| MX29LV320DTTI-70G | 制造商:Macronix International Co Ltd 功能描述:2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| MX29LV320EBTI-70G | 功能描述:IC FLASH PAR 3V 32MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。