- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380561 > MX29LV160AB (Macronix International Co., Ltd.) 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | MX29LV160AB |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 1,600位[2Mx8/1Mx16] CMOS單電壓3V時(shí)僅閃存 |
| 文件頁數(shù)： | 1/66頁 |
| 文件大小： | 1359K |
| 代理商： | MX29LV160AB |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
1
P/N:PM0866
REV. 3.7, APR. 23, 2003
MX29LV160T/B & MX29LV160AT/AB
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
CFI (Common Flash Interface) compliant (for
MX29LV160AT/AB)
- Flash device parameters stored on the device and
provide the host system to access
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Low VCC write inhibit is equal to or less than 1.4V
Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP (8x13mm:for MX29LV160T/B; 6x8mm:
for MX29LV160AT/AB)
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
FEATURES
Extended single - supply voltage range 2.7V to 3.6V
2,097,152 x 8/1,048,576 x 16 switchable
Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fast access time: 70/90ns
Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase Suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
GENERAL DESCRIPTION
The MX29LV160T/B & MX29LV160AT/AB is a 16-mega
bit Flash memory organized as 2M bytes of 8 bits or 1M
words of 16 bits. MXIC's Flash memories offer the most
cost-effective and reliable read/write non-volatile random
access memory. The MX29LV160T/B & MX29LV160AT/
AB is packaged in 44-pin SOP, 48-pin TSOP and 48-ball
CSP. It is designed to be reprogrammed and erased in
system or in standard EPROM programmers.
The standard MX29LV160T/B & MX29LV160AT/AB of-
fers access time as fast as 70ns, allowing operation of
high-speed microprocessors without wait states. To elimi-
nate bus contention, the MX29LV160T/B &
MX29LV160AT/AB has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV160T/B & MX29LV160AT/AB uses a command
register to manage this functionality. The command reg-
ister allows for 100% TTL level control inputs and fixed
power supply levels during erase and programming, while
maintaining maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV160T/B & MX29LV160AT/AB uses a
2.7V~3.6V VCC supply to perform the High Reliability
Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
Part Name
MX29LV160T/B
Difference
1) Without CFI compliant
2)CSP dimension:8x13mm
1) With CFI compliant
2)CSP dimension:6x8mm
MX29LV160AT/AB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29LV160B | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV160T | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV160AT | 10A 35V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50 |
| MX29LV161BXBI-90 | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV161BTC-70 | 1 A 20 V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV160BBTC-90 | 制造商:MX-COM Inc 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| MX29LV160CTTI-90G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (2M x 8/1M x 16) 90 ns Parallel Flash - TSOP-48 |
| MX29LV160DBGBI-70G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (8M x 2 / 16M x 1) 70 ns Parallel Flash - xFLGA-48 |
| MX29LV160DBTI-70G | 功能描述:IC FLASH PAR 3V 16MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| MX29LV160DBTI-70GTR | 制造商:Macronix International Co Ltd 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。