參數(shù)資料
型號： MX29LV160
廠商： Macronix International Co., Ltd.
英文描述： 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述： 1,600位[2Mx8/1Mx16] CMOS單電壓3V時僅閃存
文件頁數(shù)： 63/66頁
文件大?。?/td> 1359K
代理商： MX29LV160
63
P/N:PM0866
MX29LV160T/B & MX29LV160AT/AB
REV. 3.7, APR. 23, 2003
REVISION HISTORY
Revision No. Description
(MX29LV160AT/AB)
0.1
Page
Date
Mis-typing:Table 4-3 Device Gemetry Data Values
1) Device size: Data=0015h
2) Erase block region 1 information:
Data=0000h for byte address=5A, Word address=2D
Data=0040h for byte address=5E, Word address=2F
Data=0000h for byte address=60, Word address=30
Added 48-Ball CSP Package
1.Modify Ordering Information
2.Add 48-ball CSP Package Information for MX29LV160ATXEC/TXEI
/BXEC/BXBI)
(MX29LV160T/B)
1.1
Changed DQ-->Q
Modify Toggle Bit I-->II
Modify Ambient Operating Temperature 0
°
C to 70
°
C
1.2
Correct Type Error
Modify DC Characteristics VCC=5V
±
10%-->VCC=3V
±
10%
1.3
Modify Timing Waveform for Chip Unprotection 5V-->3V
1.4
1.Add "Table 8" for Read Operation, DC Characteristics
2.Add "Table 9" for Read Operation, AC Characteristics
3.Add & Modify "Table 10" for Erase/Program Operation,
AC Characteristics
4.Add "Table 11" for Alternate CE Controlled Erase/Program
Operations
5.Modify Automatic Programming Timing Waveform, Automatic
Programming Algorithm Flowchart
6.Add CE Controlled Programming Timing Waveform
8.Add Write Operation Status for DATA polling & Toggle Bit
Algorithm and Timing Waveform
9.Add Q6 vs Q2 for Erase and Erase Suspend Operation
1.5
Modify Feature--10,000 minimum erase/program cycles-->100,000-- P1
Modify General Description--even after 10,000 --->100,000 erase--
1.6
Modify Erase/Program Cycles(MIN.) 10,000-->100,000
1.7
Correct content error
Add Title Description
Add Sector Protect Timing waveform
Add Sector Protection Algorithm
1.8
Add AC Characteristics-- 29LV160T/B-70R
Add Ordering Information
1.9
Add AC Characteristics Table10 & Table11-- 29LV160T/B-70R
2.0
Delete Unlock Bypass Command Definitions
Delete Unlock Bypass Command Sequence
2.1
Add Ordering Information--48 Ball CSP
2.2
To corrected the naming of reset pin from RP to RESET
2.3
Modify Timing Waveform
Modify Automatic Programming Algorithm Flowchart
Delete Figure 21. Toggle Bit Timings(During Embedded Algorithms) P45
Add Figure 19. Toggle Bit Algorithm
Modify Absolute Maximum Ratings
P9
NOV/15/2001
0.2
0.3
P1,2,56,59 DEC/11/2001
P56
DEC/28/2001
P60
DEC/28/2001
P2,6,7,9,21,22APR/05/2000
P13
P15
P8
P16
P33
P19
P20
P23
APR/17/2000
MAY/08/2000
JUN/05/2000
P24
P26,27
P28
P39,40,41
P44
JUN/28/2000
P1
P47
P13,14,19,30 SEP/14/2000
P34,37
P35
P36
P20
P50
P23,24
P8
P14
P50
P2
P27,29,30,32 FEB/07/2001
P28
AUG/25/2000
NOV/09/2000
NOV/16/2000
JAN/04/2001
JAN/16/2001
JAN/30/2001
P43
P19
相關PDF資料
PDF描述
MX29LV160AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160T 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160AT 10A 35V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
MX29LV161BXBI-90 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
MX29LV160BBTC-90 制造商:MX-COM Inc 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48
MX29LV160CTTI-90G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (2M x 8/1M x 16) 90 ns Parallel Flash - TSOP-48
MX29LV160DBGBI-70G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 16 Mb (8M x 2 / 16M x 1) 70 ns Parallel Flash - xFLGA-48
MX29LV160DBTI-70G 功能描述:IC FLASH PAR 3V 16MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV160DBTI-70GTR 制造商:Macronix International Co Ltd 功能描述:
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