參數(shù)資料
型號(hào): MX29F800TTI-90
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
中文描述: 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP1-48
文件頁(yè)數(shù): 22/42頁(yè)
文件大小: 693K
代理商: MX29F800TTI-90
22
P/N:PM0578
MX29F800T/B
REV. 1.7, JUL. 24, 2001
AUTOMATIC SECTOR ERASE TIMING WAVEFORM (WORD MODE)
Sector data indicated by A12 to A18 are erased. Exter-
nal erase verify is not required because data are erased
automatically by internal control circuit. Erasure comple-
tion can be verified by DATA polling and toggle bit check-
ing after automatic erase starts. Device outputs 0 dur-
ing erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
tAH
Sector
Address0
555H
2AAH
2AAH
555H
555H
Sector
Address1
Sector
Addressn
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A12~A18
Q7
A0~A10
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command #30H
Command #30H
Command #30H
Command #55H
Command #AAH
Command #80H
Command #55H
Command #AAH
(Q0~Q7)
Command
In
Command
In
tDH
tDS
tCEP
tCWC
tAETB
tBAL
DATA polling
tCEPH1
tAS
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
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