參數(shù)資料
型號(hào)： MX29F800TMC-70
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
中文描述： 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝： 0.500 INCH, MO-175, SOP-44
文件頁(yè)數(shù)： 14/42頁(yè)
文件大?。?/td> 693K
代理商： MX29F800TMC-70
14
P/N:PM0578
MX29F800T/B
REV. 1.7, JUL. 24, 2001
CAPACITANCE TA = 25
o
C, f = 1.0 MHz
SYMBOL
CIN1
CIN2
COUT
PARAMETER
Input Capacitance
Control Pin Capacitance
Output Capacitance
MIN.
TYP
MAX.
8
12
12
UNIT
pF
pF
pF
CONDITIONS
VIN = 0V
VIN = 0V
VOUT = 0V
DC CHARACTERISTICS
TA = -40
o
C TO 85
o
C, VCC = 5V
±
10% (TA = 0
o
C TO 70
o
C for MX29F800T/B-70)
SYMBOL
ILI
ILO
ISB1
ISB2
ICC1
ICC2
VIL
VIH
VOL
VOH1
VOH2
PARAMETER
Input Leakage Current
Output Leakage Current
Standby VCC current
MIN.
TYP
MAX.
1
±
1
1
5
30
50
0.8
VCC + 0.3
0.45
UNIT
uA
uA
mA
uA
mA
mA
V
V
V
V
V
CONDITIONS
VIN = GND to VCC
VOUT = GND to VCC
CE = VIH
CE = VCC + 0.3V
IOUT = 0mA, f=1MHz
IOUT= 0mA, f=10MHz
0.2
Operating VCC current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage(TTL)
Output High Voltage(CMOS)
-0.3(NOTE 1)
2.0
IOL = 2.1mA
IOH = -2mA
IOH = -100uA,
VCC=VCC MIN
2.4
VCC-0.4
NOTES:
1.VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2.VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
AC CHARACTERISTICS
TA = -40
o
C TO 85
o
C, VCC = 5V
±
10% (TA = 0
o
C TO 70
o
C for MX29F800T/B-70)
29F800T/B-70
MIN.
29F800T/B-90
MIN.
29F800T/B-12
MIN. MAX.
120
120
50
0
30
SYMBOL
tACC
tCE
tOE
tDF
tOH
PARAMETER
Address to Output Delay
CE to Output Delay
OE to Output Delay
OE High to Output Float (Note1)
Address to Output hold
MAX.
70
70
40
30
MAX.
90
90
40
30
UNIT CONDITIONS
ns
CE=OE=VIL
ns
OE=VIL
ns
CE=VIL
ns
CE=VIL
ns
CE=OE=VIL
0
0
NOTE:
1. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
TEST CONDITIONS:
Input pulse levels: 0.45V/2.4V
Input rise and fall times is equal to or less than 10ns
Output load: 1 TTL gate + 100pF (Including scope and
jig)
Reference levels for measuring timing: 0.8V, 2.0V
READ OPERATION
相關(guān)PDF資料
PDF描述
MX29F800TMC-90 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F800TTC-12 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F800TTC-70 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F800TTC-90 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F800TTI-90 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29F800TMC-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F800TMI-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F800TMI-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F800TTA-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F800TTA-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
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