參數(shù)資料
型號(hào): MX29F100BMC-55
英文描述: x8/x16 Flash EEPROM
中文描述: x8/x16閃存EEPROM
文件頁(yè)數(shù): 15/43頁(yè)
文件大?。?/td> 570K
代理商: MX29F100BMC-55
15
REV. 2.3, JUL. 09, 2002
P/N: PM0515
MX29F001T/B
SYMBOL
PARAMETER
MIN.
TYP
MAX.
UNIT
CONDITIONS
ICC1 (Read)
Operating VCC Current
30
mA
IOUT=0mA, f=5MHz
ICC2
50
mA
IOUT=0mA, F=10MHz
ICC3 (Program)
50
mA
In Programming
ICC4 (Erase)
50
mA
In Erase
ICCES
VCC Erase Suspend Current
2
mA
CE=VIH, Erase Suspended
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
NOTES:
1. VIL min. = -0.6V for pulse width < 20ns.
2. If VIH is over the specified maximum value, programming operation cannot be guaranteed.
3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is
the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
READ TIMING WAVEFORMS
A0~16
CE
OE
tACC
WE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
HIGH Z
HIGH Z
DATA Valid
tOE
tDF
tCE
DATA
Q0~7
tOH
ADD Valid
DC CHARACTERISTICS
VCC = 5V
±
10% (VCC = 5V
±
5% for 29F001T/B-55)
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