參數(shù)資料
型號(hào): MX29F040TC-70
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
中文描述: 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
封裝: 8 X 20 MM, PLASTIC, MO-142, TSOP1-32
文件頁數(shù): 38/39頁
文件大小: 872K
代理商: MX29F040TC-70
38
P/N:PM0538
REV. 1.6, AUG. 08, 2001
MX29F040
REVISION HISTORY
Revision
1.0
Description
To remove "Advanced Information" datasheet marking and
contain information on products in full production.
To improve ICC1:from 40mA @5MHz to 30mA @5MHz
To add the description for 100K endurance cycle
To modify timing of sector address loading period while
operating multi-sector erase from 80us to 30us
To modify tBAL from 80us to 100us
1.Program/erase cycle times:10K cycles-->100K cycles
2.To remove A9 from "timing waveform for sector protection for
system without 12V"
To remove A9 from "timing waveform for chip unprotection for
system without 12V"
3.To add data retention minimum 20 years
Add erase suspend ready max. 100us in ERASE SUSPEND's
section at page 9
To modify "Package Information"
To add "Ambient temperature with power applied"
Page
P1
Date
JUL/01/1999
1.1
1.2
P1,13,14,33
P1,34
P8
JUL/12/1999
OCT/04/1999
P15
P1,34
P28
1.3
DEC/17/1999
P29
P1,34
P9
1.4
MAY/29/2000
1.5
1.6
P35~37
P14
JUN/12/2001
AUG/08/2001
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