參數(shù)資料
型號(hào)： MX29F001TTC-12
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 1M-BIT [128K x 8] CMOS FLASH MEMORY
中文描述： 128K X 8 FLASH 5V PROM, 120 ns, PDSO32
封裝： 8 X 20 MM, PLASTIC, MO-142, TSOP1-32
文件頁(yè)數(shù)： 8/43頁(yè)
文件大?。?/td> 876K
代理商： MX29F001TTC-12
8
REV. 2.1, JUN. 14, 2001
P/N: PM0515
MX29F001T/B
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the
device to be entirely pre-programmed prior to
executing the Automatic Set-up Sector Erase
command and Automatic Sector Erase command.
Upon executing the Automatic Sector Erase command,
the device will automatically program and verify the
sector(s) memory for an all-zero data pattern. The
system does not require to provide any control or
timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and
verification begin. The erase and verification
operations are complete when the data on Q7 is "1"
and the data on Q6 stops toggling for two consecutive
read cycles, at which time the device returns to the
Read mode. The system does not require to provide
any control or timing during these operations.
When using the Automatic Sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE,
while the command(data) is latched on the rising edge
of WE. Sector addresses selected are loaded into
internal register on the sixth falling edge of WE. Each
successive sector load cycle started by the falling edge
of WE must begin within 30us from the rising edge of
the preceding WE. Otherwise, the loading period ends
and internal auto sector erase cycle starts. (Monitor Q3
to determine if the sector erase timer window is still
open, see section Q3, Sector Erase Timer.) Any
command other than Sector Erase (30H) or Erase
Suspend (B0H) during the time-out period resets the
derice to read mode.
ERASE SUSPEND
This command only has meaning while the state ma-
chine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. Writing the Erase Suspend
command during the Sector Erase time-out immediately
terminates the time-out immediately terminates the
time-out period and suspends the erase operation.
After this command has been executed, the command
register will initiate erase suspend mode. The state
machine will return to read mode automatically after
suspend is ready. At this time, state machine only
allows the command register to respond to the Read
Memory Array, Erase Resume and Program com-
mands.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend
program operation is complete, the system can once
again read array data within non-suspended sectors.
相關(guān)PDF資料
PDF描述
MX29F001TTC-55 1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTC-70 1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTC-90 1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TQC-12 1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F002BQC-12 2M-BIT [256K x 8] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29F001TTC-55 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTC-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTC-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTI-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM
MX29F001TTI-55 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM
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