參數(shù)資料
型號(hào)： MX29F001TTC-12
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類(lèi)： DRAM
英文描述： 1M-BIT [128K x 8] CMOS FLASH MEMORY
中文描述： 128K X 8 FLASH 5V PROM, 120 ns, PDSO32
封裝： 8 X 20 MM, PLASTIC, MO-142, TSOP1-32
文件頁(yè)數(shù)： 5/43頁(yè)
文件大?。?/td> 876K
代理商： MX29F001TTC-12
5
REV. 2.1, JUN. 14, 2001
P/N: PM0515
MX29F001T/B
First Bus
Cycle
Second Bus
Cycle
Third Bus
Cycle
Fourth Bus
Cycle
Fifth Bus
Cycle
Sixth Bus
Cycle
Command
Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr Data
Addr Data
Reset
1
XXXH F0H
Read
1
RD
RD
Read Silicon ID
4
555H
AAH
2AAH
55H
555H
90H
ADI
DDI
Chip Protect Verify
4
555H AAH
2AAH 55H
555H
90H
(SA)
00H
X02H 01H
Porgram
4
555H
AAH
2AAH
55H
555H
A0H
PA
PD
Chip Erase
6
555H AAH
2AAH 55H
555H
80H
555H AAH
2AAH 55H 555H 10H
Sector Erase
6
555H AAH
2AAH 55H
555H
80H
555H AAH
2AAH 55H
SA 30H
Sector Erase Suspend
1
XXXH B0H
Sector Erase Resume
1
XXXH 30H
Unlock for chip
6
555H AAH
2AAH 55H
555H
80H
555H AAH
2AAH 55H
555H 20H
protect/unprotect
TABLE1. SOFTWARE COMMAND DEFINITIONS
Note:
1. ADI = Address of Device identifier;A1=0, A0 =0 for manufacture code, A1=0, A0 =1 for device code.(Refer to
Table 3)
DDI = Data of Device identifier : C2H for manufacture code, 18H/19H for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2.PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address to the sector to be erased.
3.The system should generate the following address patterns: 555H or 2AAH to Address A0~A10.
Address bit A11~A16=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A11~A16 in either state.
4.For chip protect verify operation : If read out data is 01H, it means the chip has been protected. If read out data is
00H, it means the chip is still not being protected.
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing
them in the improper sequence will reset the device to
the read mode. Table 1 defines the valid register com-
mand sequences. Note that the Erase Suspend (B0H)
and Erase Resume (30H) commands are valid only
while the Sector Erase operation is in progress. Either
of the two reset command sequences will reset the
device(when applicable).
相關(guān)PDF資料
PDF描述
MX29F001TTC-55 1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTC-70 1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTC-90 1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TQC-12 1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F002BQC-12 2M-BIT [256K x 8] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29F001TTC-55 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTC-70 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTC-90 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY
MX29F001TTI-12 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:EEPROM
MX29F001TTI-55 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:EEPROM
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