參數(shù)資料
型號(hào)： MX28F2100BTC-12
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類(lèi)： DRAM
英文描述： 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
中文描述： 128K X 16 FLASH 12V PROM, 120 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP1-48
文件頁(yè)數(shù)： 5/45頁(yè)
文件大?。?/td> 283K
代理商： MX28F2100BTC-12
5
MX28F2100B
P/N: PM0382
REV. 1.5, MAR. 24, 1998
TABLE 1. SOFTWARE COMMAND DEFINITIONS
COMMAND
BUS
CYCLE
FIRST BUS CYCLE
Mode
Address Data
SECOND BUS CYCLE
Mode
Address Data
X8
FFH
10H
or 40H
20H
60H
X16
XXFFH
XX10H
or XX40H
XX20H
XX60H
X8
---
X16
---
Read Memory Array
Setup Auto program/
Auto Program
Setup Erase/Erase(Chip)
Setup Erase/Erase(Block)
1
2
Write
Write
X
X
---
---
Write
Program Program Program
Address
Data
X
20H
Block
60H
Address
X
30H
Data
XX20H
XX60H
2
2
Write
Write
X
X
Write
Write
Setup Auto Erase/
Auto Erase(Chip)
Setup Auto Erase/
Auto Erase(Block)
Erase Verify
2
Write
X
30H
XX30H
Write
XX30H
2
Write
X
20H
XX20H
Write
Block
Address
X
D0H
XXD0H
2
Write
Verify
Address
X
X
X
X
X
A0H
XXA0H
Read
Verify
Data
DDI
---
---
SRD
---
Verify
Data
DDI
---
---
SRD
---
Read device identifier code
Erase Suspend
Erase Resume
Read Status Register
Clear Status Register
2
1
1
2
1
Write
Write
Write
Write
Write
90H
B0H
D0H
70H
50H
XX90H
XXB0H
XXD0H
XX70H
XX50H
Read
---
---
Read
---
ADI
---
---
X
---
COMMAND DEFINITIONS
Placing high voltage on the VPP pin enables read/write
operations. Device operations are selected by writing
specific data patterns into the command register. Ta-
ble 1 defines these MX28F2100B register commands.
Table 2 defines the bus operations of MX28F2100B.
Note:
1. Write and Read mode are defined in mode selection table.
2. ADI = Address of Device identifier; A0 = 0 for manufacture code, A0 = 1 for device code.
DDI = Data of Device identifier : C2H for manufacture code, 2BH for device code(Byte = VIL) ; 00C2H for
manufacture code, 002BH for device code(Byte =VIH)
X = X can be VIL or VIH
SRD = Status Register Data
相關(guān)PDF資料
PDF描述
MX28F2100BTC-70 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BMC-12 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BMC-70 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BMC-90 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BTC-90 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX28F2100BTC-70 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F2100BTC-90 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
MX28F4000MC-12 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
MX28F4000MC-15 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
MX28F4000MC-20 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
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