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參數(shù)資料
| 型號： | MX28F2000TPC-12C4 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 2M-BIT [256K x 8] CMOS FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 |
| 封裝： | 0.600 INCH, PLASTIC, DIP-32 |
| 文件頁數(shù)： | 1/31頁 |
| 文件大?。?/td> | 115K |
| 代理商： | MX28F2000TPC-12C4 |
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FEATURES
262,144 bytes by 8-bit organization
Fast access time: 90/120 ns
Low power consumption
– 50mA maximum active current
– 100uA maximum standby current
Programming and erasing voltage 12V
±
5%
Command register architecture
– Byte Programming (15us typical)
– Auto chip erase 5 seconds typical
(including preprogramming time)
– Block Erase
Optimized high density blocked architecture
– Eight 4-KB blocks
– Fourteen 16-KB blocks
1
P/N: PM0472
Auto Erase (chip & block) and Auto Program
– DATA polling
– Toggle bit
10,000 minimum erase/program cycles
Latch-up protected to 100mA from -1 to VCC+1V
Advanced CMOS Flash memory technology
Compatible with JEDEC-standard byte-wide 32-pin
EPROM pinouts
Package type:
– 32-pin plastic DIP
– 32-pin PLCC
REV. 1.0, Jun 13, 1997
GENERAL DESCRIPTION
The MX28F2000T is a 2-mega bit Flash memory or-
ganized as 256K bytes of 8 bits each. MXIC's Flash
memories offer the most cost-effective and reliable
read/write non-volatile random access memory. The
MX28F2000T is packaged in 32-pin PDIP and PLCC
. It is designed to be reprogrammed and erased in-
system or in-standard EPROM programmers.
The standard MX28F2000T offers access times as
fast as 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate
bus contention, the MX28F2000T has separate chip
enable (CE) and output enable (OE) controls.
MXIC's Flash memories augment EPROM function-
ality with in-circuit electrical erasure and
programming. The MX28F2000T uses a command
register to manage this functionality, while
maintaining a standard 32-pin pinout. The
command register allows for 100% TTL level control
inputs and fixed power supply levels during erase
and programming, while maintaining maximum
EPROM compatibility.
MXIC Flash technology reliably stores memory con-
tents even after 10,000 erase and program cycles.
The MXIC cell is designed to optimize the erase and
programming mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low
internal electric fields for erase and programming
operations produces reliable cycling. The
MX28F2000T uses a 12.0V
±
5% VPP supply to
perform the Auto Program/Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamps on address and data pin from -1V to VCC
+ 1V.
MX28F2000T
2M-BIT [256K x 8] CMOS FLASH MEMORY
相關PDF資料 |
PDF描述 |
|---|---|
| MX28F2000TPC-90C4 | 2M-BIT [256K x 8] CMOS FLASH MEMORY |
| MX28F2100B | 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY |
| MX28F2100BTC-12 | 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY |
| MX28F2100BTC-70 | 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY |
| MX28F2100BMC-12 | 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MX28F2000TPC-90C4 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY |
| MX28F2000TQC-12C4 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY |
| MX28F2000TQC-90C4 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8] CMOS FLASH MEMORY |
| MX28F2100B | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY |
| MX28F2100BMC-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY |
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