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參數(shù)資料
| 型號： | MX26C512AMC-10 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| 中文描述： | 為512k位[64K的× 8]的CMOS多重一次性可編程存儲器 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 114K |
| 代理商： | MX26C512AMC-10 |
9
REV.1.8, JUL. 13 , 1998
P/N: PM0455 Patent#: US#5,523,307
MX26C512A
26C512A
26C512A
-70
-90
SYMBOL
PARAMETER
MIN.
MAX.
MIN.
MAX.
UNIT
CONDITIONS
tACC
Address to Output Delay
70
90
ns
CE = OE = VIL
tCE
Chip Enable to Output Delay
70
90
ns
OE = VIL
tOE
tDF
Output Enable to Output Delay
OE High to Output Float,
35
20
40
25
ns
ns
CE = VIL
0
0
or CE High to Output Float
Output Hold from Address,
CE or OE which ever occurred firs
tOH
0
0
ns
26C512A
26C512A
26C512A
-10
-12
-15
SYMBOL
PARAMETER
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
UNIT
CONDITIONS
tACC
Address to Output Delay
100
120
150
ns
CE = OE = VIL
tCE
Chip Enable to Output Delay
100
120
150
ns
OE = VIL
tOE
tDF
Output Enable to Output Delay
OE High to Output Float,
45
30
50
35
65
50
ns
ns
CE = VIL
0
0
0
or CE High to Output Float
Output Hold from Address,
CE or OE which ever occurred first
tOH
0
0
0
ns
AC CHARACTERISTICS
TA = 0
o
C to 70
o
C, VCC = 5V
±
10%
DC PROGRAMMING CHARACTERISTICS
TA = 25
o
C
±
5
o
C
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
CONDITIONS
VOH
Output High Voltage
2.4
V
IOH = -0.40mA
VOL
Output Low Voltage
0.4
V
IOL = 2.1mA
VIH
Input High Voltage
2.0
VCC + 0.5
V
VIL
Input Low Voltage
-0.3
0.8
V
ILI
Input Leakage Current
-10
10
uA
VIN = 0 to 5.5V
VH
A9 Auto Select Voltage
11.5
12.5
V
ICC3
VCC Supply Current (Program/Erase & Verify)
50
mA
IPP2
VPP Supply Current(Program)/Erase
50
mA
CE = PGM = VIL,
OE = VIH
VCC2
Programming & Erase Supply Voltage
4.5
6.5
V
VPP2
Programming & Erase Voltage
12.5
13.0
V
IPP A9
A9 Auto Select Current /Erase
1
mA
CE = PGM = VIL,
OE = VIH
INDEX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX26C512AMC-12 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-15 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-70 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-90 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512APC-10 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX26C512AMC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMI-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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