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參數(shù)資料
| 型號： | MX26C512AMC-10 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| 中文描述： | 為512k位[64K的× 8]的CMOS多重一次性可編程存儲器 |
| 文件頁數(shù)： | 15/16頁 |
| 文件大小： | 114K |
| 代理商： | MX26C512AMC-10 |
15
REV.1.8, JUL. 13 , 1998
P/N: PM0455 Patent#: US#5,523,307
MX26C512A
Revision History
Revision#
1.2
1.3
Description
Add 28 pin TSOP and SOP packages.
Erasing mode flow chart: Chip erase (5s)----> (1s).
Programming waveforms: CE changed.
MTP ROM--->MTP EPROM
Chip erase(1s)--->0.5s. X = 60--->200
Switching Test Waveforms revise.
tEW Erase Pulse Width 1 sec---> 0.5 sec.
Programming/erase waveforms modifiction.
VPP:from 12.0~13V to 12.5V ~13V.
Erase Verify Time: 60 ---->200.
Change Part Name: 26C512 ---> 26C512A
Change tPW:Min. 95us -->Min. 20us.
Programming flow chart revised.
Mode Select Table, Erase Mode A9=VH-->A9=Vpp.
Erase flow chart revised.
Delete IPP in DC CHARACTERISTICS
Date
3/28/1997
4/10/1997
1.4
5/30/1997
1.5
1.6
1.7
7/25/1997
11/05/1997
2/10/1998
1.8
7/13/1998
INDEX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX26C512AMC-12 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-15 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-70 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-90 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512APC-10 | 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX26C512AMC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMC-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
| MX26C512AMI-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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