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參數(shù)資料
| 型號(hào)： | MX1N5809U4 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 整流器 |
| 英文描述： | 6 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 271K |
| 代理商： | MX1N5809U4 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
125 Amps Surge Rating
Ceramic Surface Mount (U4 Style)
T4-LDS-0147 Rev. 1 (091865)
Page 1 of 4
DEVICES
LEVELS
1N5807U4
1N5809U4
1N5811U4
MX
MV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive
Reverse Voltage
1N5807U4
1N5809U4
1N5811U4
1N5807U4M
1N5809U4M
1N5811U4M
VRWM
50
100
150
V
Average Forward Current, TeC = 75°
IF
6
A
Peak Surge Forward Current @ tp = 8.3ms, half sine
TC = 25°C, T = 1/120s
IFSM
125
A
Thermal Resistance, Junction to Case
Rθjc
6.5
°C/W
Operating Case Temperature Range
TC
-65°C to 175°C
°C
Storage Temperature Range
Tstg
-65°C to 175°C
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage
IF = 3A, TA = 25°C*
IF = 4A, TA = 25°C*
IF = 6A, TA = 25°C*
VF
.865
.875
.925
V
Reverse Current
VR = 50, TA = 25°C
VR = 100, TA = 25°C
VR = 150, TA = 25°C
1N5807U4
1N5809U4
1N5811U4
1N5807U4M
1N5809U4M
1N5811U4M
IR
5
μA
Reverse Current
VR = 50, TA = 125°C
VR = 100, TA = 125°C
VR = 150, TA = 125°C
1N5807U4
1N5809U4
1N5811U4
1N5807U4M
1N5809U4M
1N5811U4M
IR
525
μA
Reverse Recovery Time
IF = IRM = 1.0A
i(REC) = 0.1A
di/dt = 100A/us (min)
1N5807U4
1N5809U4
1N5811U4
1N5807U4M
1N5809U4M
1N5811U4M
Trr
525
μA
* Pulse test: Pulse width 300 sec, Duty cycle 2%
Note:
U4
U4M
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相關(guān)代理商/技術(shù)參數(shù) |
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| MX1N5809USC3 | 制造商:Microsemi Corporation 功能描述:NON QUALED LAWRENCE PARTS C3 BONDING - Bulk |
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