| 型號(hào) | 廠商 | 描述 |
| mv1870b-5% |
15 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1870ee |
15 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1858b |
1 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1860ee |
2.2 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1863a-2% |
4.7 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1863d |
4.7 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1863h-2% |
4.7 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1864b-2% |
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1866d-5% |
10 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1868a-2% |
12 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1863h |
4.7 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1864e-5% |
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1865h |
8.2 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1864f |
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1864h-2% |
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1862e-5% |
3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1862t |
3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1864b-5% |
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1863t-5% |
4.7 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1868ee |
12 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1862ee |
3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1863a-5% |
4.7 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1863ee |
4.7 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1870h-5% |
15 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| mv1n5311 2 |
MICROSEMI CORP-SCOTTSDALE | 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| ms1n5296 2 |
MICROSEMI CORP-SCOTTSDALE | 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| mx1n5296 2 |
MICROSEMI CORP-SCOTTSDALE | 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| mv1n5295 2 |
MICROSEMI CORP-SCOTTSDALE | 0.82 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| ms1n5289 2 |
MICROSEMI CORP-SCOTTSDALE | 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| mv1n5307 2 |
MICROSEMI CORP-SCOTTSDALE | 2.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| mx1n5311 2 |
MICROSEMI CORP-SCOTTSDALE | 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| mx1n5304 2 |
MICROSEMI CORP-SCOTTSDALE | 1.8 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| ms1n5298 2 |
MICROSEMI CORP-SCOTTSDALE | 1.1 mA, SILICON, CURRENT REGULATOR DIODE, DO-7 |
| mv1n5811u4 2 3 4 |
MICROSEMI CORP-LAWRENCE | 6 A, 150 V, SILICON, RECTIFIER DIODE |
| mx1n5807u4m 2 3 4 |
MICROSEMI CORP-LAWRENCE | 6 A, 50 V, SILICON, RECTIFIER DIODE |
| mx1n5809u4 2 3 4 |
MICROSEMI CORP-LAWRENCE | 6 A, 100 V, SILICON, RECTIFIER DIODE |
| mv1n6511 2 |
MICROSEMI CORP-SCOTTSDALE | UNIDIRECTIONAL, 7 ELEMENT, SILICON, TVS DIODE |
| mv205f |
UHF BAND, 2.15 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
| mv206e |
UHF BAND, 2.3 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
| mv205ee |
UHF BAND, 2.15 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
| mv206f |
UHF BAND, 2.3 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
| mv2102a |
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 | |
| mv2102 |
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 | |
| mv2103 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 | |
| mv2108 |
27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 | |
| mv2111 |
47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 | |
| mv2114d |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 | |
| mv2104d |
12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 | |
| mv2109b |
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 | |
| mv2105d |
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |