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參數(shù)資料
| 型號(hào)： | MWT-8 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | KU BAND, GaAs, RF POWER, MESFET |
| 封裝： | DIE-7 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 100K |
| 代理商： | MWT-8 |
MwT-8
16 GHz High Power
GaAs FET
MwT-8
16 GHz High Power
GaAs FET
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
75
°°°°°C or Lower
100
125
75
°°°°°C or Lower
100
125
150
0
2
4
6
8
700
600
500
400
100
0
Vds (V)
Ids
(mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°C
480
+175
720
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MwT-8
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
14 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level
of Microstrip
Gold Ridge
5x 33x 5 Mils
(1 each)
FP8
MwT-8
OPTIONAL BONDING
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
15 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
FP8
MAXIMUM RATINGS AT Ta = 25
°°°°°C
IDSS
(mA)
BIN#
1
2
3
120-
140
140-
160
160-
180
45
6
180-
200
200-
220
220-
240
78
9
240-
260
260-
280
280-
300
10
11
12
300-
320
320-
340
340-
360
13
14
15
360-
380
380-
400
400-
420
16
17
18
420-
440
440-
460
460-
480
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
BIN ACCURACY STATEMENT
18 Mils Long
200
300
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| MWT-973 | K BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
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