參數(shù)資料
型號(hào)： MWT-8
廠商： MICROWAVE TECHNOLOGY INC
元件分類(lèi)： 功率晶體管
英文描述： KU BAND, GaAs, RF POWER, MESFET
封裝： DIE-7
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 100K
代理商： MWT-8
0.6 WATT POWER OUTPUT AT 12 GHz
+40 THIRD ORDER INTERCEPT
HIGH ASSOCIATED GAIN
0.3 MICRON REFRACTORY METAL/GOLD GATE
1200 MICRON GATE WIDTH
CHOICE OF CHIP AND ONE PACKAGE TYPE
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
PAE
SSG
IDSS
Output Power at 1 dB Compression
VDS= 6.0 V IDS=180mA
Power Added Efficiency
VDS= 6.0 V IDS=180mA
Small Signal Gain
VDS= 6.0V IDS= 180mA
Recommended IDSS Range
for Optimum P1dB
12 GHz
dBm
%
dB
mA
27.0
25
28.0
35
7.5
320-
440
RF SPECIFICATIONS AT Ta = 25
°°°°°C
MwT-8
16 GHz High Power
GaAs FET
DESCRIPTION
The MwT-8 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point
communications links, and other wireless applications as the driver transistor for the output power amplifier. The third-order intercept
performance of the MwT-8 is excellent, typically 12 dB above the 1 dB compression point. The chip is produced using MwT’s reliable
metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like
Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss
ranges, insuring consistent circuit operation.
64
75
122
75
673
100
75
305
CHIP THICKNESS = 125
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 5.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.8 mA
Gate-to-Drain Breakdown Volt.
Igd= -0.8 mA
mA
120
-2.0
480
mS
144
160
-5.0
V
°°°°°C/W
-6.0
-8.0
-12.0
45
60*
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.12
nH
0.25
pF
0.2
1.4
pF
1.0
0.05
pF
150.0
mS
1.0
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
0.3
0.055
nH
60.0
0.1
pF
0.3
0.2
pF
0.1
nH
Rth
Thermal
Resistance
MwT-8
16 GHz High Power
GaAs FET
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
FEATURES
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
ORDERING INFORMATION
Chip
MwT-8
Package 71
MwT-871
All Dimensions in Microns
MwT-8 Chip,
MwT-871,
*Overall Rth depends on case mounting.
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
7
75
64
68
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