參數(shù)資料
型號(hào): MWT-671
廠商: MICROWAVE TECHNOLOGY INC
元件分類: 功率晶體管
英文描述: KU BAND, GaAs, RF POWER, MESFET
封裝: HERMETIC SEALED PACKAGE-2
文件頁數(shù): 2/2頁
文件大?。?/td> 102K
代理商: MWT-671
MwT-6
18 GHz High Power
GaAs FET
MwT-6
18 GHz High Power
GaAs FET
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
75
°°°°°C or Lower
100
125
75
°°°°°C or Lower
100
125
150
0
2
4
6
8
500.0
400.0
0
Vds (V)
Ids
(mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°C
360
+175
540
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MwT-6
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
14 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
5x 33x 5 Mils
(1 each)
FP6
MwT-6
OPTIONAL BONDING
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
18 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
FP6
MAXIMUM RATINGS AT Ta = 25
°°°°°C
IDSS
(mA)
BIN#
1
2
3
90-
105
105-
120
120-
135
45
6
135-
150
150-
165
165-
180
78
9
180-
195
195-
210
210-
225
10
11
12
225-
240
240-
255
255-
270
13
14
15
270-
285
285-
300
300-
315
16
17
18
315-
330
330-
345
345-
360
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
BIN ACCURACY STATEMENT
300.0
200.0
100.0
18 Mils Long
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MWT-770GP KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
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