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參數(shù)資料
| 型號(hào)： | MWT-671 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | KU BAND, GaAs, RF POWER, MESFET |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 102K |
| 代理商： | MWT-671 |
MwT-6
18 GHz High Power
GaAs FET
MwT-6
18 GHz High Power
GaAs FET
0.5 WATT POWER OUPUT AT 12 GHz
+39 dBm THIRD ORDER INTERCEPT
0.3 MICRON REFRACTORY METAL/GOLD GATE
900 MICRON GATE WIDTH
CHOICE OF CHIP AND ONE PACKAGE TYPE
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
PAE
Output Power at 1 dB Compression
VDS= 6.0 V IDS=150mA
Small Signal Gain
VDS= 6.0 V IDS=150mA
Power Added Efficiency
VDS= 6.0V IDS= 150mA
12 GHz
dBm
dB
%
7.5
27.0
8.0
35
RF SPECIFICATIONS AT Ta = 25
°°°°°C
12 GHz
DESCRIPTION
The MwT-6 is a GaAs MESFET is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point communica-
tions links, and other wireless applications as the driver transistor for the output power amplifier. The third-order intercept performance of
the MwT-6 is excellent, typically 12 dB above the 1 dB compression point. The chip is produced using MwT’s reliable metal system and
devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process
for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss ranges, insuring
consistent circuit operation.
50
559
100
50
292
CHIP THICKNESS = 125
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 6.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.6 mA
Gate-to-Drain Breakdown Volt.
Igd= -0.6 mA
mA
90
-2.0
360
mS
108
145
-5.0
V
°C/W
-6.0
-8.0
-12.0
60
60*
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.14
nH
0.05
pF
0.15
1.0
pF
2.0
0.07
pF
112.0
mS
2.0
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
0.72
0.04
nH
125
0.14
pF
1.44
0.017
pF
2.0
nH
Rth
Thermal
Resistance
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
FEATURES
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
ORDERING INFORMATION
Chip
MwT-6
Package 71
MwT-671
All Dimensions in Microns
MwT-6 Chip,
MwT-671
*Overall Rth depends on case mounting.
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
IDSS
Recommended IDSS Range
for Optimum P1dB
mA
240-
330
50
70
26.0
130
25
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