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參數(shù)資料
| 型號(hào)： | MWT-17 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | DIE-7 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 316K |
| 代理商： | MWT-17 |
MwT-17
500 MHz-12 GHz High Linearity
Low Noise GaAs FET
MwT-17
500 MHz-12 GHz High Linearity
Low Noise GaAs FET
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
75
°°°°°C or Lower
100
125
75
°°°°°C or Lower
100
125
150
0
2
4
6
8
1200
1000
200
Vds (V)
Ids
(mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°C
950
+175
1400
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MAXIMUM RATINGS AT Ta = 25
°°°°°C
IDSS
(mA)
BIN#
1
2
3
240-
280
280-
320
320-
360
45
6
360-
400
400-
440
440-
480
78
9
480-
520
520-
560
560-
600
10
11
12
600-
640
640-
680
680-
720
13
14
15
720-
760
760-
800
800-
840
16
17
18
840-
880
880-
920
920-
960
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
BIN ACCURACY STATEMENT
800
600
400
Bonding Diagram for the MwT-17 is Forthcoming
Please Refer to Factory for Information
0
相關(guān)PDF資料 |
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|---|---|
| MWT-1771 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
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| MWT-273 | K BAND, GaAs, RF POWER, MESFET |
| MWT-270 | K BAND, GaAs, RF POWER, MESFET |
| MWT-271 | K BAND, GaAs, RF POWER, MESFET |
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