參數(shù)資料
型號: MW7IC2425NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, PLASTIC, TO-270, CASE 1886-01, WB, 16 PIN
文件頁數(shù): 12/21頁
文件大?。?/td> 835K
代理商: MW7IC2425NR1
2
RF Device Data
Freescale Semiconductor
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
20
dBm
Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture)
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
(Case Temperature 80°C, Pout = 25 W CW)
Stage 1, 28 Vdc, IDQ1 = 55 mA
Stage 2, 28 Vdc, IDQ2 = 195 mA
RθJC
6.1
1.2
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
Stage 1 - On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 55 mA) (4)
VGS(Q)
2.7
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 55 mAdc) (4,5)
VGG(Q)
10.3
11.2
12.6
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
4. Measured in Freescale Narrowband Test Fixture.
5. See Appendix A for functional test measurements and test fixture.
(continued)
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