參數(shù)資料
型號(hào)： MW4IC001MR4
英文描述： MW4IC001MR4 800-2170 MHz. 900 mW. 28 V. W-CDMA. RF LDMOS Wideband Integrated Power Amplifier
中文描述： MW4IC001MR4 800-2170兆赫。 900毫瓦。 28五的W - CDMA。射頻LDMOS寬帶集成功率放大器
文件頁(yè)數(shù)： 1/12頁(yè)
文件大小： 781K
代理商： MW4IC001MR4
1
MW4IC001MR4
Motorola, Inc. 2004
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifier
The MW4IC001MR4 wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Motorola’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2200 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W-CDMA.
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
High Gain, High Efficiency and High Linearity
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
4.58
0.037
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case @ 85
°
C
R
θ
JC
27.3
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
0 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C2 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MW4IC001MR4/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
800-2170 MHz, 900 mW, 28 V
W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
MW4IC001MR4
REV 2
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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MW4IC001MR4_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier
MW4IC001NR4 功能描述:IC RF PWR AMP 26V 900MW 1.5-PLD RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR)
MW4IC2020 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers
MW4IC2020D 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers
MW4IC2020GMBR1 功能描述:IC PWR AMP RF 26V 20W TO272-16GW RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR)
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