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參數(shù)資料
| 型號： | MW5IC2030GNBR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 483K |
| 代理商： | MW5IC2030GNBR1 |
MW5IC2030NBR1 MW5IC2030GNBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030N wideband integrated circuit is designed with on-chip
matching that makes it usable from 1930 to 1990
MHz. This multi-stage
structure is rated for 26 to 28
Volt operation and covers all typical cellular base
station modulation formats.
Final Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 160 mA,
I
DQ2
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band, IS-95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — -49 dBc in 30 kHz Channel Bandwidth
Driver Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 220 mA, I
DQ2
=
240 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS-95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — -63 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 0 to 43 dBm CW
P
out
.
On-Chip Matching (50 Ohm Input, >4 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
On-Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
200
°
C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Document Number: MW5IC2030N
Rev. 7, 1/2006
Freescale Semiconductor
Technical Data
1930-1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W-CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW5IC2030NBR1
MW5IC2030NBR1
MW5IC2030GNBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW5IC2030GNBR1
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
(Top View)
GND
V
DS1
V
RD2
V
RG2
GND
RF
in
V
RG1
/V
GS1
GND
NC
V
DS2/
RF
out
GND
V
GS2
NC
GND
V
RD1
NC
V
RG1
/V
GS1
RF
in
V
DS1
V
GS2
V
DS2
/RF
out
Quiescent Current
Temperature Compensation
V
RD2
V
RG2
V
RD1
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
1
Note: Exposed backside flag is source
terminal for transistors.
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW5IC2030M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MW5IC2030MBR1. MW5IC2030GMBR1 1930-1990 MHz. 30 W. 26 V. GSM/GSM EDGE. W-CDMA. PHS. RF LDMOS Wideband Integrated Power Amplifiers |
| MW5IC2030MBR1 | 功能描述:IC PWR AMP RF 26V 30W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標準包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW5IC2030MBR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW5IC2030MBR5 | 功能描述:IC PWR AMP RF 26V 30W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標準包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW5IC2030NBR1 | 功能描述:射頻放大器 1.9GHZ RFIC TO272WBN RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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