參數(shù)資料
型號: MURS320-E3/59T
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 4 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數(shù): 1/4頁
文件大小: 89K
代理商: MURS320-E3/59T
Vishay General Semiconductor
MURS320
Document Number 88689
13-Jul-06
www.vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and
inverters
for
consumer,
computer
and
telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
DO-214AB (SMC)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
3.0 A
VRRM
200 V
IFSM
125 A
trr
25 ns
VF
0.71 V
Tj max.
175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS320
UNIT
Device marking code
MD
Maximum repetitive peak reverse voltage
VRRM
200
V
Working peak reverse voltage
VRWM
200
V
Maximum DC blocking voltage
VDC
200
V
Maximum average forward rectified current at: (see Fig. 1)
TL = 140 °C
TL = 130 °C
IF(AV)
3.0
4.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
125
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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