參數(shù)資料
型號: MURS320
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 整流器
英文描述: 3 A, 200 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, SMC, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 102K
代理商: MURS320
All Dimensions in millimeter
SMC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
6.60
7.11
6.22
5.59
2.92
3.18
0.31
0.15
7.75
8.13
0.05
0.20
2.01
2.50
0.76
1.52
C
H
E
F
G
D
B
A
MURS320
FEATURES
Super-Fast Recovery Time For High Efficiency
For surface mounted applications
Plastic material has Underwriters Laboratory flammability
classification 94V-O
High temperature glass passivated junction
Low forward voltage drop
MECHANICAL DATA
Case : Molded plastic
Polarity :Color band denotes cathode
Weight : 0.007 ounces, 0.21 grams
Marking : U3D
SURFACE MOUNT
SUPER FAST RECTIFIERS
REVERSE VOLTAGE - 200 Volts
FORWARD CURRENT - 3.0 Amperes
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Reverse Recovery Test Conditions :IF = 1.0 A, di/dt = 100 A/us, Recovery to 1.0 V).
3.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4.Thermal Resistance junction to Lead and Case.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Typical Junction Capacitance (Note 3)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
CJ
140
200
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at IF=3.0A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
3.0
75
0.875
0.71
5
100
TJ;TSTG
Operating and Storage Temperature Range
-65 to +175
Typical Thermal Resistance (Note 4)
RθJL
11
℃/W
pF
uA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Maximum Reverse Recovery Time (Note 1)
TRR
45
25
ns
MURS320
200
@TJ = 25℃
@TJ =150℃
@TJ = 25℃
@TJ =150℃
REV. 3, Dec-2010, KSGC04
@TL =140℃
SEMICONDUCTOR
LITE-ON
SMC
RθJC
Maximum Foeward Recovery Time (Note 2)
TFR
25
ns
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